• 专利附录
  • 专利说明
  • 权利要求
  • 类似技术
  • 同族专利
  • 引用文献
  • 法律状态
  • 优先权
    • 专利摘要:
    Spectacle lenses, such as for example toric plus lenses (positive, divergent lenses) or continuous vision lenses are to be produced in such a manner that a maximum possible reduction in weight is achieved for the spectacle lenses. To produce the spectacle lens, the precise form of the spectacle frame as well as the viewing point and the clamping point relative to a coordinate system are determined for the spectacle lens. The cross-section of the spectacle lens is then calculated in n-sections with respect to the coordinate system, this calculation being repeated until an optimized spectacle lens with minimum central thickness is calculated in conjunction with a minimum edge thickness predetermined by the spectacle frame. After the raw glass (blank) has been aligned and blocked, the spectacle lens is then milled, grinded and polished according to the previously determined optical values. <IMAGE>
    公开号:SU1727540A3
    申请号:SU894613491
    申请日:1989-02-08
    公开日:1992-04-15
    发明作者:Селбранд Хейнрих
    申请人:Хейнрих Селбранд (DE)；
    IPC主号:
    专利说明:

    The invention relates to heat treatment of semiconductor materials and can be used for heat treatment at low, medium and high temperatures of semiconductor wafers in microelectronics and electronics,
    The purpose of the invention is to increase the yield of plates and the efficiency of processing.
    FIG. 1 shows a device, a longitudinal section; in fig. 2 - the option of installing the plate loading mechanism in the expansion of the pipe-reactor; in fig. 3 shows section A-A in FIG. 2; in fig. 4 shows another installation of the plate loading mechanism in the expansion of the reactor tube; in fig. 5 is a variant of fastening the shovel of the plate loading mechanism.
    The device is a diffusion furnace for heat treatment of semiconductor wafers. The diffusion furnace consists of a pipe-reactor 1 for conducting the process, which is simultaneously the inner wall of the diffusion furnace, from the external pipe 2, fixed by the installation blocks 3 and 4 in its position relative to the pipe-reactor 1 and to the heater 5. At the open end with The loading side of the pipe-reactor 1 is expanded, while at the other end the pipe-reactor 1 is narrowed towards the gas outlet pipe 6. The gas is removed from the pipe-reactor 1 either through a three-way valve 7 and a vacuum pump 8, or through special Exhaust system with nitrogen gateway 9. Thus, both pipes 1 and 2 form a fixed "« &amp; X |
    Yu
    XS
    ate
     about

    Ca
    bathroom tubular system with a double wall. The inner and outer tubes are made of quartz, silicon, silicon carbide, alumina, polycrystalline silicon, or other materials suitable for use as semiconductors and with shape rigidity up to 1300 ° C. At the same time, alumina is not suitable for the manufacture of the inner pipe 1. Since no rigid, i.e. welded, pipe joints
    1 and 2, the latter should not be made of identical material. The block 3 is spring-loaded in the axial direction so that it can imitate the movement of the reactor tube 1 due to temperature, while the block 4 is stationary. The plate loading mechanism 10 is moved to introduce and remove semiconductor plates 11 in the axial direction. Blocks 3 and 4 are made primarily of graphite and are coated with boron nitride. Owing to this, both absolute resistance to high thermal loads and benefit- ability to be used as an absolutely clean space are achieved. System 12 purge inert gas between the pipes 1 and
    2 connected to the crown of the exhaust nozzles
    13 in block 3. Due to this, the space between pipes 1 and 2 is continuously blown, i.e. it is blown both in the operation mode and in the standby mode, which prevents contamination of, in particular, heavy metals from the heater area 5. The purge gases escape through the crown of the gas discharge nozzles 13 in block 4. The unit 4 also serves simultaneously quality of the receiver and subshell of the expanded pipe at the open end of the reactor 1. This makes it possible to almost completely eliminate the radiation of heat from the loading side.
    Cooling jacket 14 is tightly fitted to block 4, forming the actual end of pipe-reactor 1. Cooling jacket 14 contains air cooling systems 15 and water cooling 16, as well as system 17 for supplying the process gas. By means of the sealing ring 18, the cooling jacket 14 is vacuum tightly closed as soon as the mechanism 10 completely inserts the plates 11 into the tube-reactor 1. The process gases leaving the system are driven into rotation, passing through the annular gap between the expanded end of the tube-reactor 1 and glass 19 of mechanism 10, and are included in the working part of the pipe-reactor 1. At the same time, they are already heated by heater 20. Mechanism 10 is installed on the carriage with mounting
    a platform (not shown) and consists of a silicon carbide contactless spade 21, which carries the semiconductor plates 11 to be processed and, due to a large limit of permissible thermal and mechanical load, a special quartz glass 19 with a flange in which a heater is mounted 20, filling nozzle over the entire cross section from the loading side. The remaining cavity is filled with quartz wool 22. The cup 19 is fixed with a metal or ceramic plate 23 and a locking ring 24. To prevent possible thermal overload, the plate 23 is connected using a flush-mounted fitting 25 with a sealing element with the o-ring 26 and simultaneously fixed in its position on spade 21. Another adjustable heater 27 is fixedly mounted in a quartz nozzle in block 3. At the same time, the remaining cavity is also filled with quartz cotton 22. By means of the heater 27 an isothermal mode is achieved on the gas outlet side.
    The mechanism 10, as well as its variants, consists of parts that are flush-mounted and made of various materials. These parts are inserted into each other and thereby create a workable system. Preferred materials of the individual components of mechanism 10 are quartz, polycrystalline silicon, silicon carbide, homogeneous mixtures of quartz, teflon or polyamides, homogeneous mixtures of quartz and alumina, boron nitride, silicon nitride, polycrystalline silicon, or homogeneous mixtures of teflon or polyamides and aluminum oxide, silicon nitride, polycrystalline silicon, silicon carbide.
    An embodiment of the mechanism 10, as shown in FIG. 2 and 3 is provided with an insert shovel 28, which can be easily replaced by another. Such an insert spade 28 is particularly advantageous for carrying out processes characterized by a large load on the material, for example for separation, diffusion, etc. In this case, after simple removal of one shovel 28, a simple introduction of another new shovel occurs. Due to this, a diffusion oven for a very short time, in about 1-2 minutes, is ready for operation again.
    An embodiment of the mechanism 10 according to FIG. 4 is intended for private
    applications, for example, for separation. Shovel 21 in this case has a particularly low weight.
    An embodiment of the mechanism 10 according to FIG. 5 is particularly suitable for low temperature processes, plasma separation, implantation, and the like. When this shovel 21 is rigidly welded to the glass 19.
    This device is also suitable for installation in diffusion furnaces already available without the use of a large number of transitional devices.
    The device works as follows.
    The operation of the device is illustrated by the example of the oxidation process. Before the start of the process itself, heaters 5 and 27 are brought to temperatures of about 300 ° C, and heater 20 is brought to room temperature. At the same time, the inert gas purge system 12 is controlled for greater flow in order to provide additional rapid cooling of the working portion of the pipe-reactor. Then, semiconductor plates 1 placed on the mechanism 10 are introduced into the working part of the pipe-reactor 1. A vacuum-tight closure of the pipe-reactor 1 is achieved with the help of the sealing ring 18. The undetermined gaseous medium that is still in the pipe-reactor 1 is sucked off due to the smooth pumping out by the pump 8, replacing it with a certain technological gaseous medium due to blowing in through the system 17 a certain gas mixture. If necessary, this gas exchange can be repeated several times. Next, an adjustable heater 20 is connected, which, together with heaters 5 and 27, creates a uniform temperature condition in the working part of the pipe-reactor 1. At the same time, the inert gas purge system 12 is controlled to a lower flow rate. Then the oxidation process itself proceeds with all the intermediate steps. After the end of the process, the heater 20 is first turned off. Then the heaters 5 and 27 are brought to temperatures below 400 ° C, and the inert gas purge system 12 is adjusted to a higher flow rate. After a short time you
    holders, due to the previous process, the mechanism 10 with semiconductor plates 11 is removed from the reactor tube 1. After that, the process can be repeated.
    This device allows to increase the yield of suitable products and increase the processing efficiency due to isothermal heating of the processed products along the entire length of the load and area of each product.
    权利要求:
    Claims (3)
    [1]
    1. Heat treatment device for semiconductor wafers containing a reactor tube with one open end and the other in the form of a pipe, an outer tube located coaxially with the reactor tube, a ring heater located on the outside of the outer tube coaxial to it, a loading mechanism with a shovel contactless plate feeding, a working gas supply system into the reactor tube, a gas blowing system between the outer tube and the reactor tube, and a system for removing reaction products and gases connected to the pipe of the reactor tube It is equipped with two additional heaters, one of which is installed on the loading mechanism, and the second from the side of the closed end of the pipe-reactor, at the open end of the pipe -reactor expansion is performed, the loading mechanism is equipped with a glass made with the possibility of installation with an annular gap inside the expansion, the working gas supply system is configured to supply gases through the annular gap, and the product system ki - in the form of two crowns of nozzles disposed at opposite ends of the outer pipe.
    [2]
    2. A pop device, 1, characterized in that the working gas supply system is configured to rotate the supplied gases in the gap between the cup and the expanded end of the tube-reactor.
    [3]
    3. Device pop. 1, characterized in that the system for removing reaction products is designed as a three-way valve and a vacuum pump.
    类似技术:
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    同族专利:
    公开号 | 公开日
    DE3817850A1|1989-12-07|
    引用文献:
    公开号 | 申请日 | 公开日 | 申请人 | 专利标题
    RU198545U1|2020-02-26|2020-07-15|Общество с ограниченной ответственностью "Сенсор Микрон"|Device for connecting semiconductor wafers|JPS57158829A|1981-03-27|1982-09-30|Hoya Corp|Production of glasses|
    KR910000591B1|1986-10-30|1991-01-26|가부시기가이샤 도시바|Glasses frame picture process record method and it's system|DE4019866A1|1990-06-22|1992-01-02|Wernicke & Co Gmbh|Scanning and storing data for spectacle frame aperture or template - using video scanner system with angle transducer and evaluation electronics|
    DE4127094C2|1991-08-16|1994-09-08|Wernicke & Co Gmbh|System for grinding the optical surfaces and / or the peripheral edge of spectacle lenses|
    DE4427071A1|1994-08-01|1996-02-08|Wernicke & Co Gmbh|Procedure for determining boundary data|
    US6929364B1|1995-04-04|2005-08-16|Oakley, Inc.|Contoured metal eyeglass frames|
    US5815848A|1995-07-14|1998-10-06|Oakley, Inc.|Impact resistant face shield for sporting helmets|
    FR2740231B1|1995-10-20|1998-03-06|Christian Dalloz Sa|DRAFT FOR NON-CORRECTOR EYEPIECE|
    US5648832A|1995-12-05|1997-07-15|Oakley, Inc.|Decentered noncorrective lens for eyewear|
    US6056399A|1997-01-29|2000-05-02|Oakley, Inc.|Interchangeable nosepiece system|
    US6009564A|1998-06-24|2000-01-04|Oakley, Inc.|Optically corrected goggle|
    DE10020576B8|2000-04-28|2007-05-03|Rodenstock Gmbh|Method of making glasses|
    DE102007007006A1|2007-02-08|2008-08-14|Schneider Gmbh & Co. Kg|Process for producing a spectacle lens|
    法律状态:
    优先权:
    申请号 | 申请日 | 专利标题
    DE19883817850|DE3817850A1|1988-05-26|1988-05-26|Method for minimising the weight of spectacle lenses|
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